Towards 300mm superconducting devices : from FDSOI transistors to gatemon qubits
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Dr. Fabrice Nemouchi
CEA-Leti, France
Benefit of post etch treatment for defectivity improvement in the BEOL
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Dr. Nicolas Posseme
CEA-Leti, France
Integration of advanced backside power delivery network for 2nm node technology
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Dr. Kyoung-Woo Lee
Samsung Electronics Co., Ltd., Korea
Advanced XPS depth profiling analysis of metal alloys as diffusion barriers for Cu interconnects
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Dr. Bettina Wehring
Fraunhofer IPMS, Germany
High speed optical inspection of wafers
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Dr. Larissa Juschkin
KLA Corporation, USA
Reliability and performance enhancement for fully subtractive Ru Topvia interconnects
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Dr. Koichi Motoyama
IBM, USA
Innovations enabling the continued extendibility of Cu and Post-Cu damascene BEOL technology
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Dr. Daniel C. Edelstein
IBM, USA
Unconventional reduction in resistivity of atomic scale topological semimetal of NbP and TaP
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Prof. Il-Kwon Oh
Ajou University, Korea
Selective deposition in interconnect: enabling high-performance and scalable integration
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Dr. Jongmin Baek
Samsung Electronics Co., Ltd., Korea
Optimized two metal level semi-damascene interconnects for superconducting digital logic
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Mr. Blake Hodges
IMEC, Belgium
Advancing pillar-based FSAV integration of Ru interconnect to enlarge the process window and enable multi-layers of high-aspect ratio
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Dr. Giulio Marti
IMEC, Belgium
Metal interconnection of high bandwidth memory in wafer level packaging
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Team Leader. Juheon Yang
SK hynix, Korea
